Shown goods: from 1 to 5 (5 всього)
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| Код | photo_camera | Remains | shopping_cart | ||||||
|---|---|---|---|---|---|---|---|---|---|
| 050700 |  | Photodiode 32V 940nm 400nm~1100nm 5nA SMD,3.9x4.4mm Photodiode | всього: 90 pcs маг ДП: 90 pcs |
| EVERLIGHT | SMD,3.9x4.4mm | |||
| 050716 |  | Photodiode 32V 940nm 730nm~1100nm 10nA SMD-4P,2.7x3.2mm Photodiode | всього: 262 pcs маг ДП: 262 pcs |
| EVERLIGHT | SMD-4P,2.7x3.2mm | |||
| 050717 |  | Photodiode 32V 940nm 400nm~1100nm 10nA SMD-4P,2.8x3.3mm Photodiode | всього: 270 pcs маг ДП: 270 pcs |
| EVERLIGHT | SMD-4P,2.8x3.3mm | |||
| 050718 |  | Photodiode 32V 940nm 730nm~1100nm 5nA SMD,3.9x4.4mm Photodiode | всього: 85 pcs маг ДП: 85 pcs |
| EVERLIGHT | SMD,3.9x4.4mm | |||
| 050719 | | Photodiode 32V 940nm 400nm~1100nm 5nA SMD,3.9x4.4mm Photodiode | всього: 85 pcs маг ДП: 85 pcs |
| EVERLIGHT | SMD,3.9x4.4mm |
A photodiode is a semiconductor receiver of optical radiation, which converts light that falls on its photosensitive area into an electric charge due to processes in the p-n-junction.
A photodiode, the work of which is based on the photovoltaic effect (separation of electrons and holes in the p- and n-region, due to which the charge and EMF are formed), is called a solar cell. In addition to p-n photodiodes, there are p-i-n photodiodes, in which a layer of undoped semiconductor i is located between the p and n layers. p-n- and p-i-n-photodiodes only convert light into electric current, but do not amplify it, unlike avalanche photodiodes and phototransistors.
