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Whole catalog Active ingredientsTransistors, modulesField effect transistors
Product code:
005925

Transistor IRFP250N

Field-effect transistor N-Канальный
V dss = 200 V ; R ds = 0.085 Ohm ; I d 25°C = 30 A ; I d 100°C = 19 A; R°C/W = 0.65°C/W; P d = 190 W
Transistor IRFP250N
Case: TO247
Manufacturer: International Rectifier (IR)
NOT available.
Expected price: 46,20 UAH
from 1 pc : 46,20 UAH
from 25 pcs : 43,89 UAH ( -5,0%)
from 100 pcs : 41,58 UAH ( -10,0%)
Prices are indicated at the time of product availability and may change upon receipt

Current balances:

NOT available

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Parameter Value
Channel: N-Канальный
Logic level: НЕТ
Drain-source breakdown voltage, V dss : 200 V
On-drain drain-source resistance, R ds : 0.085 Ohm
Constant drain current, at temperature = 25°C, I d 30 A
Permanent drain current, at temperature = 100°C, I d 19 A
Maximum die-to-case thermal resistance, R°C/W: 0.65°C/W
Maximum power dissipation, P d : 190 Tue

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The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.

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