Transistor LBSS138LT1G

N-Channel Logic Level Enhancement Mode Field Effect Transistor
Vdss = 50 V; RDS (ON) = 3.5Ω @ VGS = 10 V; RDS (ON) = 6.0Ω @ VGS = 4.5 V.

Case: SOT23
Manufacturer: LRC
In stock

0,542

UAH

10,84

UAH

Issue rate: 20 pcs (The ordered amount will be automatically rounded to 20 pcs)

from 20 pcs :	—	0,542	UAH
from 300 pcs :	—	0,488	UAH	( -10,0%)
from 3000 pcs :	—	0,406	UAH	( -25,1%)

Current balances:

Магазин-Днепр

15075 pcs

For Online Orders

15075 pcs

Specifications

Производитель	LRC
Корпус	SOT23
Структура	N
Схема соединения	Одиночный
V(BR)DSS - напряжение пробоя сток-исток	50 V
Vgs - напряжение затвор-исток	±20 V
Id25 - постоянный ток стока при 25°C	0.2 А
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=10V	3.5 Ом
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=5V	6 Ом
VGS(th) - пороговое напряжение затвор-исток (диапазон)	0.5 ... 1.5 V
Мощность рассеяния при 25°C	0.225 Вт

The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.

If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП sensrv.voron@gmail.com

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Transistor LBSS138LT1G

Current balances:

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