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Whole catalog
↠ Active ingredients
↠ Transistors, modules
↠ Field effect transistors
Transistor IRF9530NPBF Vdss = -100 V; Rds = 0.2 ohm; Id25°C = -14 A; Id100°C = -10 A; R°C/W = 1.9°C/W; Pd = 79W
from 1 pc :
—
17,20 UAH
from 50 pcs :
—
15,91 UAH
( -7,5%)
from 200 pcs :
—
14,62 UAH
( -15,0%)
Магазин-Днепр
295 pcs
For Online Orders
295 pcs
Производитель
International Rectifier (IR)
Корпус
TO220
Структура
P
Схема соединения
Одиночный
V(BR)DSS - напряжение пробоя сток-исток
-100 V
Vgs - напряжение затвор-исток
±20 V
Id25 - постоянный ток стока при 25°C
-14 А
Id75(100) - постоянный ток стока при 75(100)°C
-10 А
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=10V
0.2 Ом
VGS(th) - пороговое напряжение затвор-исток (диапазон)
-2 ... -4 V
Мощность рассеяния при 25°C
79 Вт
Крутизна характеристики прямой передачи - Мин.
3.2
Qg - заряд затвора
3.87e-8
Рабочая температура
-55°C
The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП
sensrv.voron@gmail.com contacts
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