У зв'язку зі святкуванням Нового Року ми працюємо за наступним графіком: • з 31.12.24(Вт) по 02.01.25(Чт) не працюємо • з 03.01.25(Пт) працюємо в звичайному режимі.
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Field-effect transistor N-Канальный Логический уровень V dss = 30 V ; R ds = 0.25 Ohm ; I d 25°C = 1.2 A ; I d 100°C = 0.93 A; R°C/W = 230°C/W; P d = 0.54 W
Constant drain current, at temperature = 25°C, I d
1.2 A
Permanent drain current, at temperature = 100°C, I d
0.93 A
Maximum die-to-case thermal resistance, R°C/W:
230°C/W
Maximum power dissipation, P d :
0.54 Tue
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The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
