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Whole catalog Active ingredientsTransistors, modulesField effect transistors
Код товару:
009981

IRFI840G

Field-effect transistor N-Канальный
V dss = 500 V ; R ds = 0.85 Ohm ; I d 25°C = 4.6 A ; I d 100°C = 2.9 A; R°C/W = 3.1°C/W; P d = 40 W
IRFI840G
Корпус: TO220ISO
Manufacturer: International Rectifier (IR)
NOT available.
Expected price: 59,54 UAH
from 1 pc : 59,54 UAH
from 50 pcs : 55,17 UAH ( -7,3%)
from 100 pcs : 50,69 UAH ( -14,9%)
Prices are indicated at the time of product availability and may change upon receipt

Current balances:

NOT available

Technical documentation

Зображення товару

Product description format_size zoom_out zoom_in

Parameter Value
Channel: N-Канальный
Logic level: НЕТ
Drain-source breakdown voltage, V dss : 500 V
On-drain drain-source resistance, R ds : 0.85 Ohm
Constant drain current, at temperature = 25°C, I d 4.6 A
Permanent drain current, at temperature = 100°C, I d 2.9 A
Maximum die-to-case thermal resistance, R°C/W: 3.1°C/W
Maximum power dissipation, P d : 40 Tue

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The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.

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