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Whole catalog Active ingredientsTransistors, modulesField effect transistors
Код товару:
009890

Transistor IRF2804

Field-effect transistor N-Канальный
V dss = 40 V ; R ds = 0.002 Ohm ; I d 25°C = 280 A ; I d 100°C = 200 A; R°C/W = 2.2°C/W; P d = 330 W
Transistor IRF2804
Корпус: TO220
Manufacturer: International Rectifier (IR)
NOT available.
Expected price: 46,20 UAH
from 1 pc : 46,20 UAH
from 50 pcs : 41,58 UAH ( -10,0%)
from 200 pcs : 36,96 UAH ( -20,0%)
Prices are indicated at the time of product availability and may change upon receipt

Current balances:

NOT available

Technical documentation

Зображення товару

Product description format_size zoom_out zoom_in

Parameter Value
Channel: N-Канальный
Logic level: НЕТ
Drain-source breakdown voltage, V dss : 40 V
On-drain drain-source resistance, R ds : 0.002 Ohm
Constant drain current, at temperature = 25°C, I d 280 A
Permanent drain current, at temperature = 100°C, I d 200 A
Maximum die-to-case thermal resistance, R°C/W: 2.2°C/W
Maximum power dissipation, P d : 330 Tue

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The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
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